67 radhard msi logic UT54ACS132/ut54acts132 radiation-hardened quadruple 2-input nand schmitt triggers features ? radiation-hardened cmos - latchup immune ? high speed ? low power consumption ? single 5 volt supply ? available qml q or v processes ? flexible package - 14-pin dip - 14-lead flatpack description the UT54ACS132 and the ut54acts132 are 2-input nand gates with schmitt trigger input levels. a high applied on both the inputs forces the output to a low state. the devices are characterized over full military temperature range of -55 c to +125 c. function table logic symbol pinouts 14-pin dip top view 14-lead flatpack top view logic diagram inputs output an bn yn l l h l h h h l h h h l y1 (3) (6) y2 y3 (8) (11) y4 (1) a1 (2) b1 (4) a2 (5) b2 (9) a3 (10) b3 (12) a4 (13) b4 note: 1. logic symbol in accordance with ansi/ieee standard 91-1984 and iec publication 617-12. & a1 b1 y1 a2 b2 y2 v ss v dd b4 a4 y4 b3 a3 y3 1 14 2 13 3 12 4 11 5 10 6 9 7 8 v dd b4 a4 y4 b3 a3 y3 a1 b1 y1 a2 b2 y2 v ss 1 14 2 13 3 12 4 11 5 10 6 9 7 8 b4 a4 y4 b3 a3 y3 a1 b1 y1 a2 b2 y2 .com .com .com .com 4 .com u datasheet
radhard msi logic 68 UT54ACS132/ut54acts132 radiation hardness specifications 1 notes: 1. logic will not latchup during radiation exposure within the limits defined in the table. 2. device storage elements are immune to seu affects. absolute maximum ratings note: 1. stresses outside the listed absolute maximum ratings may cause permanent damage to the device. this is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. exposure to absolute ma ximum rating conditions for extended periods may affect device reliability. recommended operating conditions parameter limit units total dose 1.0e6 rads(si) seu threshold 2 80 mev-cm 2 /mg sel threshold 120 mev-cm 2 /mg neutron fluence 1.0e14 n/cm 2 symbol parameter limit units v dd supply voltage -0.3 to 7.0 v v i/o voltage any pin -.3 to v dd +.3 v t stg storage temperature range -65 to +150 c t j maximum junction temperature +175 c t ls lead temperature (soldering 5 seconds) +300 c jc thermal resistance junction to case 20 c/w i i dc input current 10 ma p d maximum power dissipation 1 w symbol parameter limit units v dd supply voltage 4.5 to 5.5 v v in input voltage any pin 0 to v dd v t c temperature range -55 to + 125 c .com .com .com .com .com 4 .com u datasheet
69 radhard msi logic UT54ACS132/ut54acts132 dc electrical characteristics 7 (v dd = 5.0v 10%; v ss = 0v 6 , -55 c < t c < +125 c) symbol parameter condition min max unit v t + schmitt trigger, positive going 1 threshold acts acs 2.25 .7v dd v v t - schmitt trigger, negative going 1 threshold acts acs 0.5 .3v dd v v h schmitt trigger, typical range of hysteresis 2 acts acs 0.3 0.6 0.9 1.5 v i in input leakage current acts/acs v in = v dd or v ss -1 1 a v ol low-level output voltage 3 acts acs i ol = 8.0ma i ol = 100 a 0.40 0.25 v v oh high-level output voltage 3 acts acs i oh = -8.0ma i oh = -100 a .7v dd v dd - 0.25 v i os short-circuit output current 2 ,4 acts/acs v o = v dd and v ss -200 200 ma i ol output current 10 (sink) v in = v dd or v ss v ol = 0.4v 8 ma i oh output current 10 (source) v in = v dd or v ss v oh = v dd - 0.4v -8 ma p total power dissipation 2, 8, 9 c l = 50pf 1.9 mw/ mhz i ddq quiescent supply current v dd = 5.5v 10 a i ddq quiescent supply current delta acts for input under test v in = v dd - 2.1v for all other inputs v in = v dd or v ss v dd = 5.5v 3.1 ma c in input capacitance 5 = 1mhz @ 0v 15 pf c out output capacitance 5 = 1mhz @ 0v 15 pf .com .com .com .com .com 4 .com u datasheet
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